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1 vacuum epitaxy
епітаксія у вакуумі, вакуумна епітаксіяEnglish-Ukrainian dictionary of microelectronics > vacuum epitaxy
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2 epitaxy
епітаксія - atom layer epitaxy
- chemical beam epitaxy
- chloride vapor phase epitaxy
- close space epitaxy
- EBE epitaxy
- electron-beam epitaxy
- flow-rate modulation epitaxy
- gas-source molecular-beam epitaxy
- hot wall epitaxy
- hydrothermal epitaxy
- isolated silicon epitaxy
- lateral epitaxy
- liquid-phase epitaxy
- liquid epitaxy
- liquid-phase shift epitaxy
- liquid shift epitaxy
- low-temperature epitaxy
- metalloorganic vapor-phase epitaxy
- migration-enhanced epitaxy
- molecular-beamepitaxy
- molecularepitaxy
- photoassisted molecular-beam epitaxy
- seeding epitaxy
- selective epitaxy
- self-masking epitaxy
- solid-phase epitaxy
- thin-film epitaxy
- vacuum epitaxy
- vapor levitation epitaxy
- vapor-phase epitaxy
- vapor-transport epitaxy -
3 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer
См. также в других словарях:
vacuum epitaxy — vakuuminė epitaksija statusas T sritis fizika atitikmenys: angl. vacuum epitaxy vok. Vakuumepitaxie, f rus. вакуумная эпитаксия, f pranc. épitaxie à vide, f … Fizikos terminų žodynas
Space Vacuum Epitaxy Center — is the 8,000 square feet of laboratory space in 3 buildings on the University of Houston campus. The SVEC facilities contains equipment dedicated to thin film deposition, processing and characterization of III V compound semiconductor, high… … Wikipedia
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Ultra high vacuum — (UHV) is the vacuum regime characterised by pressures lower than about 10−7 pascal or 100 nanopascals ( 10−9 torr). UHV requires the use of special materials in creating the vacuum system, extreme cleanliness to maintain the vacuum system, and… … Wikipedia
Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… … Wikipedia
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Wake Shield Facility — is an experimental science platform that was placed in low earth orbit by the Space Shuttle. It is a 3.7 meter (12 ft) diameter, free flying stainless steel disk.The WSF is deployed in the wake of the Space Shuttle at an orbital altitude of over… … Wikipedia
Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol … Wikipedia
